Epitaxial Single-Layer Graphene on the SiC Substrate

Sergey Yu. Davydov; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.717-720.645

Paper Titles

Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
p.629

Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
p.633

Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001)
p.637

Electrical Characterization of the Graphene-SiC Heterojunction
p.641

Epitaxial Single-Layer Graphene on the SiC Substrate
p.645

Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation
p.649

Studies of Li Intercalation into Epitaxial Graphene on SiC(0001)
p.653

Plasma-Based Chemical Modification of Epitaxial Graphene
p.657

Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy
p.661

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Epitaxial Single-Layer Graphene on the SiC...

Epitaxial Single-Layer Graphene on the SiC Substrate

Abstract:

The analytical expression for the density-of-states (DOS) of single-layer graphene interacting with the SiC surface (epitaxial graphene) is obtained. The silicon carbide DOS is described within the scope of the Haldane-Anderson model. It is shown that due to the interaction with the substrate the gap of about 0.01-0.06 eV arises in the epitaxial graphene DOS. The estimation indicates that the electron charge of about (−10-3) e/atom transfers from the substrate to graphene.

You might also be interested in these eBooks

View Preview

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

645-648

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.645

Citation:

Cite this paper

Online since:

May 2012

Authors:

Sergey Yu. Davydov, Alexander A. Lebedev

Keywords:

Density of States (DOS), Graphen, Green's Function

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S.Yu. Davydov and A.A. Lebedev, Tech. Phys. Lett. 36 (2010) 856.

Google Scholar

[2] C. Coletti, C. Riedel, D.S. Lee, B. Krauss, L. Patthey, K. von Klitzig, J.H. Smet and U. Starke, Phys. Rev. B 81 (2010) 235401.

Google Scholar

[3] S.Yu. Davydov, Semiconductors 45 (2011) 618.

Google Scholar

[4] S.Yu. Davydov. Tech. Phys. Lett. 37 (2011) 476.

Google Scholar

[5] S.Yu. Davydov and S.V. Troshin: Phys. Solid State 49 (2007) 1583.

Google Scholar

[6] S.Yu. Davydov. Semiconductors 45 (2011) 1070.

Google Scholar

[7] S.Yu. Davydov. Semiconductors 41 (2007) 718.

Google Scholar

[8] A. Mattausch and O. Pankratov, Phys.Rev. Lett. 99 (2007) 076802.

Google Scholar

[9] L. Vitalis, C. Riedel, R. Jhmann, I. Brihuega, U. Starke, and K. Kern, Surf. Sci. 602 (2008) L127.

Google Scholar

[10] T. Seyller, A. Bostwick, K.V. Emtsev, K. Horn, L. Ley, J.L. McChesney, T. Ohta, J.D. Riley, E. Rotenberg, and F. Speck, Phys. Stat. Sol. (b) 245 (2008) 1436.

DOI: 10.1002/pssb.200844143

Google Scholar

[11] O. Pankratov, S. Hensel, and M. Bockstedte, Phys. Rev. B 82 (2010) 121416 (R).

Google Scholar

[12] T. Jayasekera, S. Xu, K.W. Kim, and B. Nardelli. Phys. Rev. B 84 (2011) 035442.

Google Scholar

[13] S. Kopylov, A. Tzalenchuk, S. Kubatkin, and V.I. Val'ko. Appl. Phys. Lett. 97 (2010) 112109.

Google Scholar