Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material

Tomonari Yasuda; Masashi Kato; Masaya Ichimura

doi:10.4028/www.scientific.net/MSF.717-720.585

Paper Titles

The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface
p.569

Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
p.573

Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
p.577

First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge
p.581

Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material
p.585

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC
p.589

Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface
p.595

Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth
p.601

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
p.605

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Characterization of Photoelectrochemical...

Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material

Abstract:

Hydrogen energy attracts attention as an eco-friendly energy resource. The water splitting by semiconductor materials can generate hydrogen without CO2 emission. However, the hydrogen conversion efficiency using conventional materials is not high enough, or the materials corrode easily even if they show high efficiency. On the other hand, silicon carbide (SiC) is expected to be a water splitting material showing high conversion efficiency without corrosion. In this study, we characterized band edge potentials for 4H-, 6H- and 3C-SiC, and we revealed that they are capable of water splitting. We also estimated conversion efficiencies by photocurrent measurements in electrolytes for bulk 4H- and 6H-SiC.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

585-588

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.585

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Online since:

May 2012

Authors:

Tomonari Yasuda, Masashi Kato, Masaya Ichimura

Keywords:

Hydrogen, Photoelectrochemical Properties, Water Splitting

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