Theoretical Study of Thermoelectric Properties of SiC Nanowires

Abstract:

We present, for the first time, simulations of thermoelectric properties of silicon carbide (SiC) nanowires as a function of the wire cross section at high temperature (500K), based on non-equilibrium classical molecular dynamics simulations for the lattice thermal transport and non-equilibrium green's function for the electrical transport. Our calculations show that figure of merit (ZT) was increasing with decreasing cross section area: ZT of SiC nanowire at 2x2 nm2 has maximum value in the range of 0.65 - 0.89 at 500K, which is 7 - 8 times larger than maximum ZT of SiC thin film value (0.125 at 973 K). These results show that SiC may be a promising material for thermoelectric applications operating at high temperature.

• Periodical: Materials Science Forum (Volumes 717-720)
• Pages: 561-564
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.717-720.561
• Online since: May 2012
• Authors: J.H. Choi, M. Pala, L. Latu-Romain, Edwige Bano
• Keywords: Figure of Merit (FOM), Nanowire, Thermoelectric Properties

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