Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD

Man I. Lei; Mehran  Mehregany

doi:10.4028/www.scientific.net/MSF.717-720.541

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HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Seebeck Coefficient of Heavily Doped...

Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD

Abstract:

The Seebeck coefficient of heavily-nitrogen-doped n-type polycrystalline 3C-SiC (n-SiC) and platinum (Pt) thin films has been measured from room temperature up to 300 °C by using a microfabricated test structure. At room temperature, the absolute Seebeck coefficient of the n-SiC is -10 μV/°C. With ambient temperature increase, the absolute Seebeck coefficient of the n-SiC is found to gradually increase, reaching -20 μV/°C at 300 °C.

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Periodical:

Materials Science Forum (Volumes 717-720)

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541-544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.541

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Online since:

May 2012

Authors:

Man I. Lei, Mehran Mehregany

Keywords:

Polycrystalline Silicon Carbide, Seebeck Coefficient, Thermoelectric, Thermopile

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