4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Qiang Xu; Hua Yang Sun; Cheng Chen; Ling Yun Jang; E. Rusli; Suwan P. Mendis; Chin Che Tin; Zhi Ren Qiu; Zhengyun Wu; Chee Wee Liu; Zhe Chuan Feng

doi:10.4028/www.scientific.net/MSF.717-720.509

Paper Titles

On the Stability of 3C-SiC Single Crystals at High Temperatures
p.493

XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal
p.497

Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress
p.501

Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si
p.505

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering
p.509

Mechanical Properties of Cubic SiC, GaN and AlN Thin Films
p.513

Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications
p.517

Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates
p.521

Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever
p.525

HomeMaterials Science ForumMaterials Science Forum Vols. 717-7204H-SiC Wafers Studied by X-Ray Absorption and...

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Abstract:

Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies.

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Materials Science Forum (Volumes 717-720)

Pages:

509-512

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.509

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Online since:

May 2012

Authors:

Qiang Xu, Hua Yang Sun, Cheng Chen, Ling Yun Jang, E. Rusli, Suwan P. Mendis, Chin Che Tin, Zhi Ren Qiu, Zhengyun Wu, Chee Wee Liu, Zhe Chuan Feng

Keywords:

4H-SiC, Photoluminescence (PL), Raman Scattering, Synchrotron Radiation, X-Ray Absorption

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