Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC

Jean François Barbot; S. Leclerc; Christophe Tromas; Valerie Audurier; Alain Declémy; Michael Texier; Marie France Beaufort

doi:10.4028/www.scientific.net/MSF.717-720.485

Paper Titles

Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors
p.469

Low Frequency Noise in 4H-SiC Lateral JFET Structures
p.473

Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
p.477

Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals
p.481

Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC
p.485

High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
p.489

On the Stability of 3C-SiC Single Crystals at High Temperatures
p.493

XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal
p.497

Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress
p.501

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Strain Build-Up, Swelling and Stacking Fault...

Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC

Abstract:

Ion implantation into 4H-SiC induces a local gradient of strain which increases with the nuclear energy losses. With the increase of temperature the strain tends to become uniform in the whole implanted area requiring the migration of particles. In case of helium implantation, defects are more stabilized and their evolutions observed post thermal annealing are concomitant with the surface swelling. The local modifications imputed to the ion process lead to the formation and the pile-up of stacking faults in the highly damaged region.