Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs

B.R. Tuttle; S. Dhar; S.H. Ryu; X. Zhu; J.R. Williams; L.C. Feldman; S.T. Pantelides

doi:10.4028/www.scientific.net/MSF.717-720.453

Paper Titles

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
p.437

Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
p.441

Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO₂ Structures
p.445

Silicon Carbide-Silicon Dioxide Transition Layer Mobility
p.449

Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
p.453

Total Near Interface Trap Density Calculation of 4H-SiC/SiO₂ Structures before and after Nitrogen Passivation
p.457

Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices
p.461

Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
p.465

Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors
p.469

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Sodium, Rubidium and Cesium in the Gate Oxides of...

Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs

Abstract:

Large group-I elements such as sodium, rubidium and cesium have recently been incorporated in the gate oxide of SiC power MOSFETs. In the case of sodium incorporation, enhanced field effect mobilities have been definitively observed. Based on density functional calculations, we find large group-I elements serve as a shallow impurities near the interface. The enhanced mobility, observed in the case of sodium, can be explained in terms of an impurity band model.