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The grain orientations in standard wrought forms of metallic products are shown the image. 2013 2nd International Conference on Mechanical Properties of Materials and Information Technology (ICMPMIT 2013) will be held on August 17-19, 2013, Hong Kong. 2013 2nd International Conference on Mechanical Properties of Materials and Information Technology (ICMPMIT 2013) is the premier forum for the presentation of new advances and research results in the fields of echanical Properties of Materials and Information Technology.
The conference will bring together leading researchers, engineers and scientists in the domain of interest from around the world.
This proceeding contains the selected papers which discuss the most interesting and up-to date topics, for example, Advanced Materials and Processing Technology, Product Design and Manufacturing Technology, Applied Mechanics and Measurement Technology, Mechatronics, Automation and Signal Processing, Communication and Information Technology in Engineering and so on.

We conducted the experiments in order to produce a description among bars of different types to assist engineers to better comprehend the relative corrosion resistance of steel bars.
[3] Castro H., Rodríguez H., and Belzunce F.J., Mechanical behaviour and corrosion resistance of stainless steel cold rolled reinforcing bars; Materials Science Forum 426-432 (2003) 1541–1546
M., Stress corrosion cracking of austenitic stainless steel alloys for reinforced concrete, Advanced Materials Forum III – Mat.
Forum 514-516 (2006) 1511-1515

The conference is an international forum for the presentation of technological advances and research results in the fields of Industrial Materials -Applications, Products, and Technologies.
The conference will bring together leading researchers, engineers and scientists in the domain of interest from around the world.
This volume comprised the selected papers from the subject areas of Advanced Materials, Material Processing Technology, Designing and Manufacturing Technologies in Mechanical Engineering, Automation and Mechatronics, Building Materials and Construction Technology, Product Design and Agriculture and Food Industry.
Dehuai Zeng WCIM 2014 Organization Committee Honorary Chair Yuan Lee, NorthWestern University, USA General Chairs Jun Zhang, Huazhong University of Science and Technology, China Minli Dai, Suzhou University, China Organizing Chairs Khine Soe Thaung , Maldives College of Higher Education, Maldives Biswanath Vokkarane, Society on Social Implications of Technology and Engineering , Maldives Program Chairs Harry Zhang, IERI Macau office, Macau Dehuai Yang, Huazhong Normal University, China Publication Chairs Dehuai Zeng, Shenzhen University, China International Committee Somchai Seviset, King Mongkut's Institute of Technology Ladkrabang, Thailand Chaturong Louhapensang, King Mongkut's Institute of Technology Ladkrabang, Thailand Yao-Wen Hsu, Ta-Hwa University, Taiwan Lieh Chen, Ta-Hwa University, Taiwan Hamada M.
Elgamal, Harbin Engineering University, China Jianfei Zhang, Tianjin Polytechnic University, China Xin Wang, Harbin University of Commerce, China Xuefeng Ren, China University of Mining and Technology, China Xiaoqing Zuo, Kunming University of Science and Technology, China Xinzhong Wang, Changsha University of Science & Technology, China Wenbang Gong, Wuhan Textile University, China Xiao Su, Jishou University, China Jiashan Wang, Tianjin Bohai Vocational Technology College, China Xianjing Ruan, Guangdong Pharmaceutical University, China Peng Gao, Guilin University of Electronic Technology, China

Sudarshan 2,f 1 Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden 2 Electrical Engineering Department, University of South Carolina, South Carolina, USA a msy@ifm.liu.se, broy@ifm.liu.se, cyazdi@ifm.liu.se, darjunan@engr.sc.edu, e evgueni@engr.sc.edu, f sudarsha@engr.sc.edu Keywords: Growth, Epitaxy, Non-conventional Surfaces, Thick Layers.
In this work we have developed the sublimation epitaxial growth conditions for advanced surfaces grown on )0001( orientations, to include )0211( and particularly )0011( .
Forum 338-342 (2000), p. 1105
Forum 483-485 (2005), p. 841

Density and Behavior of Etch Pits on C-face 4H-SiC Surface Produced by ClF3 Gas Hitoshi Habuka1, a, Kazuchika Furukawa1, a , Toshimitsu Kanai1, a, and Tomohisa Kato2,b 1Department of Chemical and Energy Engineering, Yokohama National Univ., Japan 2Advanced Power Electronics Research Center, National Institutes of Advanced Science and Technology, Japan ahabuka1@ynu.ac.jp, bt-kato@aist.go.jp Keywords: 4H-SiC, C-face, chlorine trifluoride gas, etch pit Abstract.
Forum, Vol. 600-603 (2008) 655-658
Forum, Vol. 645-648 (2010) 787-790

How to optimize the performance of the toroidal worm-gearing drive is always the goal of many scholars and engineers.
Tang, The Study on the Optimization and Application of the modification parameters of toroidal worm-gearing, 2010 International Conference on Computing,Control & Industrial Engineering, Forum Vol. 2 2010, p. 119 [3] Q.
Tang: The Research and Analysis of the New Modification Theory of Toroidal Worm-Gearing, System Science, Engineering Design and Manufacturing Informatization (ICSEM), 11 2010, p.59-62, [4] H.
Tang, A Proof of the Modification Theory Formula of Toroidal Worm-Gearing, Advanced Manufacturing Technology, Forum Vol. 156-157 2010, p. 1050-1054

Materials Science Forum Vols. *** (2004) pp.269-272 online at http://scientific.net  2004 Trans Tech Publications, Switzerland Theoretical and Experimental Study on Optimum Design of Gear Profile Modification Curves S.S.
Cheng 1,c 1 School of Mechanical Engineering, Shandong University, P.R.China, 250061 a shshzhang@sdu.edu.cn, bzjzcolor@163.com, ccheng@sdu.edu.cn Keywords: Gear transmission, Gear tooth modification curve, Optimum design Abstract.
Fig.2 The ordinate represents vibration acceleration level; the abscissa represents rotational speed (rpm); and curves 1, 2, 3 and 4 correspond to unmodified, linear-, parabola- and sinusoid-modification, respectively Materials Science Forum Vols. *** 271 1 2 3 4 The curve is always tip relief and root relief, and the modification mainly happens in double-teeth meshing area.
Tang: Chinese Journal of Mechanical Engineering Vol. 29 (1993), p. 35 (in Chinese) [3] Y.
Wang: Chinese Journal of Mechanical Engineering Vol. 30 (1994), p. 212 (in Chinese) [4] Y.

The objective of MSCS 2011 was to provide a forum within which researchers, educators, engineers, and government officials involved in the general areas of Materials Science and Computing Science could disseminate their latest research results and exchange views on future research directions in these fields.

Materials Science Forum Vols. *** (2004) pp.784-789 online at http://scientific.net  2004 Trans Tech Publications, Switzerland Mechanism of Electrode Material Removal in Short Pulse Time Electric Discharge Machining Z.L.
Zhao 1,d 1 Dept. of Mechanical Engineering, Harbin Institute of Technology, Harbin, China a wangzl@hit.edu.cn, bcuijingzhitt@hotmail.com, cliuxf@hit.edu.cn, dzws@hit.edu.cn Keywords: Electric discharge machining, Electrode material removal, Mathematic model Abstract.
Advances in Materials Manufacturing Science and Technology 786 We apply ANSYS to solve this problem, and the following figures are the analyzing results.
Under polar coordinates system, when stress does not change in R direction and a force P acts on the electrode surface constantly, the distortion of a random point is: Advances in Materials Manufacturing Science and Technology 788 2 (1 ) cos ln sin cos sin r m s P P u r I K E E ν θ θ θ θ θ π π − = − − + − 2 (1 ) (1 ) sin ln sin cos cos sin m m s P P P u r Hr K I E E E θ ν ν θ θ θ θ θ θ π π π + + = − − − + + − (8) where rm is the polar distance, θ is the polar angle, E is Youngs modulus and v is Poisson ratio.
Van.Dijck, W.L .Dutré: Journal of Physics D: Applied Physics Vol. 7 (1974), p. 899 Materials Science Forum Vols. *** 789 [2] A.

Fabrication of 700V SiC-SIT with ultra-low on-resistance of 1.01mΩ·cm2 Yasunori Tanaka1,a, Koji Yano2,b, Mitsuo Okamoto 1,c , Akio Takatsuka 1,d , Kenji Fukuda1,e, Masanobu Kasuga2,f, Kazuo Arai1,g and Tsutomu Yatsuo 1,h 1 Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 2 Interdisciplinary Graduate School of Medical and Engineering, Yamanashi University, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan a yasunori-tanaka@aist.go.jp, byano@esd.yamanashi.ac.jp, cmitsuo-okamoto@aist.go.jp, d a-takatsuka@aist.go.jp, e k-fukuda@aist.go.jp, fkasuga@es.yamanashi.ac.jp, garai-kazuo@aist.go.jp, h t-yatsuo@aist.go.jp Keywords: SiC-BGSIT, JFET, buried gate, submicron trench, breakdown voltage, on resistance Abstract.
Forum Vols. 389-393 (2002), pp.1185-1188
Forum Vols. 457-460 (2004), pp.1213-1216
Forum Vols. 389-393 (2002), pp.1227-1230
Forum Vols. 483-485 (2005), pp.881-884.