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The cyclic life data under strain controlled testing is conventionally presented in the form of a plot of saturated plastic strain amplitude against the number of reversals to failure, known as the Coffin-Manson plot [4].
This becomes more important especially at elevated temperatures where deformation mechanisms are complex and drastic reduction in cyclic life can take place with and increase in the mean stress [5-7].
Correlating the above results with the cyclic life data presented in Table-1, it was found that the dominant mode of failure is creep (necking) at 923 K for all loading combinations while the same is found to be fatigue at 823 K.
At 923 K, a very high amount of strain accumulation during successive cycling causes permanent deformation resulting in a reduction in the gauge diameter, leading to excessive geometrical softening which finally dominates over cyclic hardening and mean stress dependent hardening caused by the decrease in the plastic strain amplitude [7].
This phenomenon becomes more prominent with the increase in mean stress resulting in a drastic reduction in cyclic life even if the plastic strain amplitude is lower.

The present paper concerns the materials of press hardened steels and its’ manufacturing technology (Hot stamping) applied on vehicle on EuroCarBody from 2009 to 2013 through presentations and benchmark datas.
The present paper concerns the materials of press hardened steels and its’manufacturing technology (Hot stamping) applied on vehicle on EuroCarBody from 2009 to 2013 through presentations and benchmark datas.
The applied lightweight technologies(including hot stamping) on Audi A3 can achieve weight reduction of 43kg of BIW.
The integrated design technology with PHS can achieve total costs reduction of 30%.
The using percentage of PHS on BIW are summarized and analyzied through the data statistics.

G-f data is collected at several depletion biases near flatband.
The G-f data is then converted to GP/ω to isolate the conductance strictly due to the interface traps [10].
At 175°C, the t50 data extrapolates back to well over 100 years at 3 MV/cm.
TDDB data for nitrided thermal oxides on 4H-SiC indicating >100 years reliability up to 300ºC.
Also, MOSFET data matches MOS-C data at 175°C.

The experimental data was found to be very close to simulation data.
Introduction The size reduction of electronic circuits and the advances in low power design, open the possibility to use low power sources.
In this context, the size reduction of harvesting devices until the scale of the Micro Electro Mechanical System (MEMS) have received much attention due to the advantages such as: low volume and weight and integration with silicon technology and its read out circuits [3, 4].
Output voltage for the simulation analysis and the experimental data for the rectangular beam Table 2.
(Hz) Ref Rectangular 2.09 1.5x0.5x0.5 255 [7] Rectangular 1530 100x10x.1 20 [8] Rectangular 344 .8x.08.x.001 51.5 [9] Rectangular 0.4 1x.8x.01 525 [10] Rectangular 600 31.75x3.175x0.508mm 255 This work Trapezoidal 950 3.17x1.27mm 157 This work harvesting devices with related works Fig.5 shows the comparison between FE simulation and experimental data.

A thin surface-near layer, which is highly N-doped during the chemical vapour deposition growth, leads to a reduction of DIT only close to the conduction band edge.
peak position (cm -3) 30 min anneal at 1500°C in Ar max. peak position/in-situ N-doped layer dmax (nm) consumed SiC-layer dcons (nm) UFB (V) integrated DIT (cm -2) (EC - (0.1 to 0.6 eV)) #1 not-implanted - - 46 +2.4 2.7 x 10 13 #2 2 x 1017 no 30 46 +1.5 2.4 x 1013 #3 7 x 1017 no 30 46 -0.1 ≈ 8 x 1012 #4 1 x 1018 no 30 46 -1.5 ≈ 3 x 1012 #5/5a 3 x 1018 no/yes 30 46 -9.4 7.5 x 109 #6/6a 7 x 1018 no/yes 30 46 -14.1 6.5 x 1011 #7/7a 1 x 1019 no/yes 30 46 -30 4.6 x 1011 #8 3 x 1019 yes 45 45 < -40 no data #9 3 x 1019 yes 45 90 -5.4 6.0 x 1010 #10 in situ, 3 x 1018 - 30 12 +1.2 ≈ 2 x 1013 #11 in situ, 3 x 1018 - 30 39 +2.6 2.2 x 1013 MOS capacitors.
The corresponding curves of sample #11 in Figs. 2 and 3 (see squares) show no large shift of the flat-band voltage and a reduction of DIT only close to the conduction band edge (reduction of NITs).

The data was collected from 10 to 100º 2θ with a step size of 0.02º and a count time of 12s on a Brüker D8 Advance Diffractometer (Brüker, UK) in flat plate geometry, using Ni filtered Cu Kα radiation.
The phases were identified using the Crystallographica Search-Match (CSM) software (Oxford Cryosystems, UK) and the International Centre for Diffraction Data (ICDD) database (vols. 1-42). 2.5.
Before running a sample, the machine was calibrated against a 4-point calibration curve, and the data was analysed using the Chromeleon ® software package.
This finding correlated well with the XRD data where the 0.25 and 0.3mol compositions revealed identical phases.
Considering the anion release, the P3O93 species showed the highest release rate which correlated well with the XRD data obtained, as this cyclic species was the dominant phase identified.

The SEM image data confirmed the round and circular nature of Ag NPs.
The EDX data presented the elemental configuration with a solid peak at 65 KeV that matched the silver.
This method follows the bottom-up technique, where the reduction process is the main reaction.
The reduction of various metals happens using these functional groups into their respective metallic NPs [6].
The data are shown in Figure (6).

Particle size reduction of B4C is found to have positive impact on the material hardness.
From all these data, particle size reduction of B4C is found to have positive impact on the material hardness.
Therefore, the reduction of the reinforcement size to nano-level has permitted hardening without sacrificing the machinability (when machined by abrasive assisted ECM).
But this approach of hardening (reduction of reinforcement size) seems to be different and is preferable over other approaches.

The ratio of non-reduced Eu3+ ions in the NaAlSiO4:Eu2+ phosphor synthesized using SiO powder was decreased by the reduction effect of SiO powder.
Although a high-temperature reaction synthesis enhances the reduction of a Eu2+-doped silicate phosphor [13], the technique is unsuitable for a sodium-containing compound such as NaAlSiO4:Eu2+ material.
Powder X-ray diffraction (XRD) data were obtained using an X-ray diffractometer (MX-Labo; Mac Science Ltd.).
Data were recorded in steps of 0.03 eV in the transmission mode.
The simulation pattern of NaAlSiO4 was calculated from structural data of the Inorganic Crystal Structure Database (ICSD) # 155001.

Only consider constant demand when 25 data lines, drivers and others can be found in more detail in [10].
The restrictions were fully satisfied and loss reduction obtained was of 56.91%.
This in order to determine how much varies both the optimal DG location and size and the system losses reduction.
In terms of losses reduction, results show that it remains relatively in close values: from 57 to 59%.
These show that, in general, the PF value which favors further loss reduction is 0.9 capacitive.