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Online since: June 2014
Authors: Carlos Maurício Fontes Vieira, Monica Castoldi Borlini Gadioli, Michelle Pereira Babisk, Sergio Neves Monteiro, Veronica Scarpini Candido, Mariane Costalonga de Aguiar
Pedro Calmon, 900, 21941-908, Cidade Universitária, Rio de Janeiro – RJ, Brazil. 3 - IME - Military Institute of Engineering, Department of Materials Science, Praça General Tibúrcio, 80, 22290-270, Rio de Janeiro, Brazil.
Forum Vols. 727-728 (2012), p. 619
Forum Vols. 727-728 (2012), p. 809
Forum Vols. 727-728 (2012), p. 1057
Forum, 2013
Online since: December 2004
Authors: Jing Zhi Cui, X.F. Liu, Wan Sheng Zhao, Zhen Long Wang
Materials Science Forum Vols. *** (2004) pp.784-789 online at http://scientific.net  2004 Trans Tech Publications, Switzerland Mechanism of Electrode Material Removal in Short Pulse Time Electric Discharge Machining Z.L.
Zhao 1,d 1 Dept. of Mechanical Engineering, Harbin Institute of Technology, Harbin, China a wangzl@hit.edu.cn, bcuijingzhitt@hotmail.com, cliuxf@hit.edu.cn, dzws@hit.edu.cn Keywords: Electric discharge machining, Electrode material removal, Mathematic model Abstract.
Advances in Materials Manufacturing Science and Technology 786 We apply ANSYS to solve this problem, and the following figures are the analyzing results.
Under polar coordinates system, when stress does not change in R direction and a force P acts on the electrode surface constantly, the distortion of a random point is: Advances in Materials Manufacturing Science and Technology 788 2 (1 ) cos ln sin cos sin r m s P P u r I K E E ν θ θ θ θ θ π π − = − − + − 2 (1 ) (1 ) sin ln sin cos cos sin m m s P P P u r Hr K I E E E θ ν ν θ θ θ θ θ θ π π π + + = − − − + + − (8) where rm is the polar distance, θ is the polar angle, E is Youngs modulus and v is Poisson ratio.
Van.Dijck, W.L .Dutré: Journal of Physics D: Applied Physics Vol. 7 (1974), p. 899 Materials Science Forum Vols. *** 789 [2] A.
Online since: October 2006
Authors: Yasunori Tanaka, Mitsuo Okamoto, Kenji Fukuda, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo, Masanobu Kasuga, Koji Yano
Fabrication of 700V SiC-SIT with ultra-low on-resistance of 1.01mΩ·cm2 Yasunori Tanaka1,a, Koji Yano2,b, Mitsuo Okamoto 1,c , Akio Takatsuka 1,d , Kenji Fukuda1,e, Masanobu Kasuga2,f, Kazuo Arai1,g and Tsutomu Yatsuo 1,h 1 Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 2 Interdisciplinary Graduate School of Medical and Engineering, Yamanashi University, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan a yasunori-tanaka@aist.go.jp, byano@esd.yamanashi.ac.jp, cmitsuo-okamoto@aist.go.jp, d a-takatsuka@aist.go.jp, e k-fukuda@aist.go.jp, fkasuga@es.yamanashi.ac.jp, garai-kazuo@aist.go.jp, h t-yatsuo@aist.go.jp Keywords: SiC-BGSIT, JFET, buried gate, submicron trench, breakdown voltage, on resistance Abstract.
Forum Vols. 389-393 (2002), pp.1185-1188
Forum Vols. 457-460 (2004), pp.1213-1216
Forum Vols. 389-393 (2002), pp.1227-1230
Forum Vols. 483-485 (2005), pp.881-884.
Online since: December 2004
Authors: Yan Shen Xu, F.Y. Zhang, D.J. Hu
Materials Science Forum Vols. *** (2004) pp.613-619 online at http://scientific.net  2004 Trans Tech Publications, Switzerland The Objectives Decision Making Study in Product Innovation Development Process Based On TRIZ Technology Evolution Theory F.Y.
Hu 1,c 1 CAD/CAM Lab, Department of Mechanical Engineering, Tianjin University, Tianjin, China 300072 a fyzhang@twtmail.tju.cn, byshxu@tju.edu.cn, chudj2000@yahoo.com Keyword: TRIZ theory of technology evolution, Objects decision-making in product development, Evolutionary potential, Innovation strategy Abstract.
Former two steps determining the technology level, and retral Fig.2 Evolutionary potential radar plot Materials Science Forum Vols. *** 615 two steps accomplish object analysis and decision-making.
Materials Science Forum Vols. *** 617 The outside perimeter of the plot represents evolutionary limit at present, it is a removable perimeter with the progress of technology environment.
Luke: A Conceptual Design Tool for Engineers: An Amalgamation of Theory of Constraints,theory of Iinventive Problem Solving and Logic (Old Dominion University, U.K. 2002) [4] J.F.
Online since: January 2013
Authors: Kazuaki Seki, Toru Ujihara, Atsushi Horio, Takato Mitsuhashi, Yuji Yamamoto, Shunta Harada
Forum 600-603 (2009) 267-272
Janzen, Current status and advances in the growth of SiC, Diamond Relat.
Forum 615-617 (2009) 137-140
Forum 717-720 (2012) 53-56
Forum 717-720 (2012) 335-338
Online since: August 2017
Authors: Mariano Marcos Bárcena, José Ríos, Fernando Mas, Carlos Vila, Done Ugarte, Thierry Chevrot
Collaboration with the aerospace industry Currently, the main objectives of the aerospace industry are directly linked to industrial projects framed within different European ‘Advanced Manufacturing’ initiatives, e.g.
[Industry forum].
Fielding, et al., Product lifecycle management in design and engineering education: International perspectives, Concurrent Engineering, 22 (2014) 123-134
Treagust, Engineering education—Is problem-based or project-based learning the answer, Australasian Journal of Engineering Education, 3 (2003) 2-16
Batista, et al., Design and Development of Integrated Lab-Practical Class in Manufacturing Engineering, Materials Science Forum 759 (2013) 27-38
Online since: May 2012
Authors: Tomohisa Kato, Kazuchika Furukawa, Hitoshi Habuka, Toshimitsu Kanai
Density and Behavior of Etch Pits on C-face 4H-SiC Surface Produced by ClF3 Gas Hitoshi Habuka1, a, Kazuchika Furukawa1, a , Toshimitsu Kanai1, a, and Tomohisa Kato2,b 1Department of Chemical and Energy Engineering, Yokohama National Univ., Japan 2Advanced Power Electronics Research Center, National Institutes of Advanced Science and Technology, Japan ahabuka1@ynu.ac.jp, bt-kato@aist.go.jp Keywords: 4H-SiC, C-face, chlorine trifluoride gas, etch pit Abstract.
Forum, Vol. 600-603 (2008) 655-658
Forum, Vol. 645-648 (2010) 787-790
Online since: October 2006
Authors: Rositza Yakimova, Tangali S. Sudarshan, Mikael Syväjärvi, Arul Arjunan, Eugene Toupitsyn, Gholam Reza Yazdi
Sudarshan 2,f 1 Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden 2 Electrical Engineering Department, University of South Carolina, South Carolina, USA a msy@ifm.liu.se, broy@ifm.liu.se, cyazdi@ifm.liu.se, darjunan@engr.sc.edu, e evgueni@engr.sc.edu, f sudarsha@engr.sc.edu Keywords: Growth, Epitaxy, Non-conventional Surfaces, Thick Layers.
In this work we have developed the sublimation epitaxial growth conditions for advanced surfaces grown on )0001( orientations, to include )0211( and particularly )0011( .
Forum 338-342 (2000), p. 1105
Forum 483-485 (2005), p. 841
Online since: July 2015
Authors: Mircea Dobrescu, Marius Vasilescu
We conducted the experiments in order to produce a description among bars of different types to assist engineers to better comprehend the relative corrosion resistance of steel bars.
[3] Castro H., Rodríguez H., and Belzunce F.J., Mechanical behaviour and corrosion resistance of stainless steel cold rolled reinforcing bars; Materials Science Forum 426-432 (2003) 1541–1546
M., Stress corrosion cracking of austenitic stainless steel alloys for reinforced concrete, Advanced Materials Forum III – Mat.
Forum 514-516 (2006) 1511-1515
Online since: July 2020
Authors: Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Wei Fang Lu, Isamu Akasaki, Daiki Tanaka
Zhang, Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties, Materials Science and Engineering: R: Reports 71 (2010) 1-34
Forum Vol. 717-720 (2012) pp87-92
Series: Materials Science and Engineering 56 (2014) 012005
Syväjärvi, Carrier lifetimes and influence of in-grown defects in NB co-doped 6H-SiC, IOP Conference Series: Materials Science and Engineering, IOP Publishing, (2014) 012004
Lilov, Epitaxial growth of 4H–SiC by sublimation close space technique, Materials Science and Engineering B 61 (1999) 121-124