Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth

Yuji Yamamoto; Shunta Harada; Kazuaki Seki; Atsushi Horio; Takato Mitsuhashi; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.740-742.15

Paper Titles

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
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Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
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SiC Single Crystal Growth on Dual Seed with Different Surface Properties
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Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
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Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
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Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
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Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
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Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Effect of Surface Polarity on the Conversion of...

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth

Abstract:

We investigated the dislocation behaviors during the solution growth on Si-face and C-face off-axis 4H-SiC seed crystals by using synchrotron X-ray topography. On Si-face, almost all threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are converted into Frank-type defects and basal plane dislocations (BPDs), respectively. On the other hand, on C-face, TSDs were hardly converted. Some of TEDs were converted to BPDs and BPD-TED reconversion was often occurred. Therefore, to reduce density of threading dislocations in the grown crystal, it is better to use Si-face off-axis seed crystal.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

15-18

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.15

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Online since:

January 2013

Authors:

Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Toru Ujihara

Keywords:

4H-SiC, Polarity, Solution Growth, Threading Dislocation, X-Ray Topography

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