Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent

Takeshi Yoshikawa; Sakiko Kawanishi; Kazuki Morita; Toshihiro Tanaka

doi:10.4028/www.scientific.net/MSF.740-742.31

Paper Titles

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
p.15

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
p.35

Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
p.39

On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
p.43

Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
p.48

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Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent

Abstract:

This paper describes the solution growth of SiC by a temperature difference method using an Fe-Si solvent. Crystal growth of SiC from an Fe-40 mol%Si solvent onto a seed wafer of 6H-SiC or 4H-SiC was carried out at 1623 – 1723 K under induction heating. Homo-epitaxial growth on both 6H-SiC and 4H-SiC was identified by Raman spectroscopy, and the SiC growth rate was found to be 90 – 260 μm/h. Experiments were also conducted under resistance heating at 1623 K using conditions which suppressed natural convection. Convective mass transfer in the solution was found to be important for rapid growth of SiC.