Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide

Martin Seiss; Thierry Ouisse; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.740-742.48

Paper Titles

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
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Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
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Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
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On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
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Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
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Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
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The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
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Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
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Growth of Large Diameter 4H-SiC by TSSG Technique
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Absence of Back Stress Effect in the PVT Growth of...

Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide

Abstract:

The growth process of silicon carbide crystals by physical vapor transport (PVT) on Si-face (0001) on-axis 6H-SiC substrates was analyzed. The growth rate was observed to be almost inversely proportional to the deposition pressure (R ∝ p-1) meaning that the growth rate is not limited by the number of growth spirals but by the vapor phase transport of the depositing species from the source to the sample surface. Analysis of the spiral step width shows an inverse square root dependence on the growth rate (y0 ∝ R-½). This experimental result is in accordance with the Burton, Cabrera and Frank theory and hence it can be concluded that there is no back-stress effect present.

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Materials Science Forum (Volumes 740-742)

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48-51

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https://doi.org/10.4028/www.scientific.net/MSF.740-742.48

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Online since:

January 2013

Authors:

Martin Seiss, Thierry Ouisse, Didier Chaussende

Keywords:

Back Stress Effect, BCF Theory, Growth Rate, PVT, Spiral Growth

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