Paper Titles
Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
p.35
Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
p.39
On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
p.43
Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
p.48
Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
p.52
The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
p.56
Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.60
Growth of Large Diameter 4H-SiC by TSSG Technique
p.65
SiC Sublimation Growth at Small Spacing between Source and Seed
p.69

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

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Abstract:

Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.

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Silicon Carbide and Related Materials 2012 View Preview

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

52-55

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.52

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Online since:

January 2013

Authors:

Thomas Hupfer, Philip Hens, Michl Kaiser, Valdas Jokubavicius, Mikael Syväjärvi, Peter J. Wellmann

Keywords:

Mass Transport, Modeling, Silicon Carbide (SiC), Sublimation Epitaxy

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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