Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC

Sakiko Kawanishi; Takeshi Yoshikawa; Kazuki Morita

doi:10.4028/www.scientific.net/MSF.740-742.35

Paper Titles

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
p.35

Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
p.39

On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
p.43

Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
p.48

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
p.52

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Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC

Abstract:

Precise morphological control of the interface between SiC and solution during the solution growth of SiC is crucial for obtaining high quality crystals with fewer defects and less step bunching. In this paper, a new technique for real-time observation of the high temperature interface between SiC and solution through the back surface of SiC was developed by focusing on the “wide” bandgap of SiC. Real-time observation of the interface during dissolution of SiC into an Fe-Si solvent alloy was carried out using a digital microscope, and the submicron-height structure of the solid-liquid interface was clearly observed at up to 1773 K. Interface morphologies, such as numerous hexagonal pits which were present at the initial stage of dissolution, followed by preferential dissolution in the lateral direction, were observed.