On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method

Gennadi A. Emelchenko; Andrey A. Zhokhov; Ilya I. Tartakovskii; Andrey A. Maksimov; Edward A. Steinman

doi:10.4028/www.scientific.net/MSF.740-742.43

Paper Titles

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
p.35

Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
p.39

On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
p.43

Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
p.48

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
p.52

The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
p.56

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.60

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742On Peculiarities of Defect Formation in 6Н-SiC...

On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method

Abstract:

The structural defects in the single 6H-SiC crystals grown by the PVT method have been studied by the scanning electron microscopy, Raman scattering and photoluminescence techniques. The formation mechanism of the defects, micropipes and parasitic polytypes 4H and 15R, observed in the single 6H-SiC crystal has been proposed.

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Materials Science Forum (Volumes 740-742)

Pages:

43-47

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.43

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Online since:

January 2013

Authors:

Gennadi A. Emelchenko, Andrey A. Zhokhov, Ilya I. Tartakovskii, Andrey A. Maksimov, Edward A. Steinman

Keywords:

6H-SiC, Defect Formation, PVT- Growth

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