Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth

Georg Neubauer; Michael Salamon; Florian Roider; Norman Uhlmann; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.740-742.27

Paper Titles

SiC Single Crystal Growth on Dual Seed with Different Surface Properties
p.11

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
p.15

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
p.35

Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
p.39

On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
p.43

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Application of 3-D X-Ray Computed Tomography for...

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth

Abstract:

In this paper, we present for the first time an in-situ 3-D reconstruction of the SiC crystal growth interface using X-ray computed tomography (CT). We show that the shape of the growth interface can be determined with high precision at growth temperatures above 2100 °C in a conventional 3” PVT (physical vapor transport) growth system.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

Pages:

27-30

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.27

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Online since:

January 2013

Authors:

Georg Neubauer, Michael Salamon, Florian Roider, Norman Uhlmann, Peter J. Wellmann

Keywords:

3-D X-Ray, Computed Tomography, CT, PVT, SiC Bulk Crystal Growth

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References

[1] P. J. Wellmann, K. Konias, P. Hens, R. Hock, A. Magerl, In-situ observation of polytype switches during SiC PVT bulk growth by high energy X-ray diffraction, Materials Science Forum 615-617 (2009) 23-26.

DOI: 10.4028/www.scientific.net/msf.615-617.23

Google Scholar

[2] K. Konias, R. Hock, M. Stockmeier, P. J. Wellmann, M. Miller, S. Ossege, A. Magerl, In-situ X-ray measurements of defect generation during PVT growth of SiC, Materials Science Forum 556-557 (2007) 267-270.

DOI: 10.4028/www.scientific.net/msf.556-557.267

Google Scholar

[3] R. Hock, K. Konias, L. Perdicaro, A. Magerl, P. Hens, P. J. Wellmann, Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction, Materials Science Forum 645-648 (2010) 29-32.

DOI: 10.4028/www.scientific.net/msf.645-648.29

Google Scholar

[4] I. A. Feldkamp, L. C. Davis, J. W. Kress, PRACTICAL CONE-BEAM ALGORITHM, Journal of the Optical Society of America A: Optics and Image Science, and Vision 1 (1984) 612-619.

Google Scholar

[5] P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. L. Straubinger, A. Winnacker, In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging, Journal of Crystal Growth 216 (2000).

DOI: 10.1016/s0022-0248(00)00372-9

Google Scholar

[6] P. J. Wellmann, D. Hofmann, L. Kadinski, M. Selder, T. L. Straubinger, A. Winnacker, Impact of source material on silicon carbide vapor transport growth process, Journal of Crystal Growth 225 (2001) 312-316.

DOI: 10.1016/s0022-0248(01)00881-8

Google Scholar

[7] P. J. Wellmann, Z. Herro, T. L. Straubinger, A. Winnacker, In situ synthesis, of source material from elemental Si and C during SiC PVT growth process and characterization using digital X-ray imaging, Materials Science Forum 389-393 (2002) 91-94.

DOI: 10.4028/www.scientific.net/msf.389-393.91

Google Scholar

[8] Z. G. Herro, P. J. Wellmann, R. Püsche, M. Hundhausen, L. Ley, M. Maier, P. Masri, A. Winnacker, Investigation of mass transport during PVT growth of SiC by 13C labeling of source material, Journal of Crystal Growth 258 (2003) 261-267.

DOI: 10.1016/s0022-0248(03)01538-0

Google Scholar

[9] P. Wellmann, Z. Herro, A. Winnacker, R. Püsche, M. Hundhausen, P. Masri, A. Kulik, M. Bogdanov, S. Karpov, M. Ramm, Y. Makarov, In situ visualization of SiC physical vapor transport crystal growth, Journal of Crystal Growth 275 (2005) e1807-e1812.

DOI: 10.1016/j.jcrysgro.2004.11.253

Google Scholar