SiC Single Crystal Growth on Dual Seed with Different Surface Properties

Sang Il Lee; Jung Young Jung; Mi Seon Park; Hee Tae Lee; Doe Hyung Lee; Won Jae Lee; Soon Ku Hong; Im Gyu Yeo; Heung Rak Kim; Myong Chuel Chun

doi:10.4028/www.scientific.net/MSF.740-742.11

Paper Titles

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
p.3

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
p.7

SiC Single Crystal Growth on Dual Seed with Different Surface Properties
p.11

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
p.15

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742SiC Single Crystal Growth on Dual Seed with...

SiC Single Crystal Growth on Dual Seed with Different Surface Properties

Abstract:

SiC crystal ingots were grown on 6H-SiC dual-seed crystal with different surface properties by a PVT (Physical Vapor Transport) technique. And then SiC crystal wafers sliced from the SiC ingots were systematically investigated in order to find out the dependence of surface properties for seed on the polytype formation. While n-type SiC crystals exhibiting the 4H polytype were grown on seed crystal having high root-mean-square (rms) value, 6H-SiC crystals were grown on seed having lower rms value. However, 6H polytype was maintained on on-axis and off-axis seeds during the entire growth period. The crystal quality of 6H-SiC single crystals grown on on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on off-axis seed.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.11

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Online since:

January 2013

Authors:

Sang Il Lee, Jung Young Jung, Mi Seon Park, Hee Tae Lee, Doe Hyung Lee, Won Jae Lee, Soon Ku Hong, Im Gyu Yeo, Heung Rak Kim, Myong Chuel Chun

Keywords:

4H-SiC, Off-Orientation, Polytype Transformation, PVT, Surface Roughness (SR)

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