Preface, Sponsors and Committees
Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
p.3
p.3
Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
p.7
p.7
SiC Single Crystal Growth on Dual Seed with Different Surface Properties
p.11
p.11
Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
p.15
p.15
Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19
p.19
Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23
p.23
Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27
p.27
Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31
p.31
Preface, Sponsors and Committees
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 740-742)
Online since:
January 2013
Сopyright:
© 2013 Trans Tech Publications Ltd. All Rights Reserved
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