Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy

Takeshi Mitani; Masayuki Okamura; Tetsuo Takahashi; Naoyoshi Komatsu; Tomohisa Kato; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.740-742.3

Paper Titles

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy
p.3

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
p.7

SiC Single Crystal Growth on Dual Seed with Different Surface Properties
p.11

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
p.15

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
p.27

Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Growth of 4H-SiC in Current-Controlled Liquid...

Growth of 4H-SiC in Current-Controlled Liquid Phase Epitaxy

Abstract:

4H-SiC crystallization from Si-C solution in electric current-controlled liquid phase epitaxy was investigated. The dependence of growth speed on a DC current shows that dissolution/growth is controlled by the electric current without altering temperature gradient in the furnace. Application of an electric current leads to reduction of growth speed with negative polarity and enhancement of growth speed with positive polarity. The variation of the growth speed with a DC current density has been explained by the combination of the effects of electromigration of C solute and Joule heating.

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Materials Science Forum (Volumes 740-742)

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3-6

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.3

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Online since:

January 2013

Authors:

Takeshi Mitani, Masayuki Okamura, Tetsuo Takahashi, Naoyoshi Komatsu, Tomohisa Kato, Hajime Okumura

Keywords:

Current-Controlled LPE, Electromigration, Joule Heating, LPEE, Solution Growth

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