Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

Naoyoshi Komatsu; Takeshi Mitani; Tetsuo Takahashi; Masayuki Okamura; Tomohisa Kato; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.740-742.23

Paper Titles

Growth of Low Basal Plane Dislocation Density 4H-SiC Crystals in Controlled Temperature Distribution inside the Crucible
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SiC Single Crystal Growth on Dual Seed with Different Surface Properties
p.11

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth
p.15

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates
p.19

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution
p.23

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth
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Investigation of Solution Growth of SiC by Temperature Difference Method Using Fe-Si Solvent
p.31

Real-Time Observation of High Temperature Interface between SiC Substrate and Solution during Dissolution of SiC
p.35

Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
p.39

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Growth Rate and Surface Morphology of 4H-SiC...

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

Abstract:

We have investigated growth rate and surface morphology of 4H-SiC single crystal grown from Si-C solution with various supersaturation levels at growth temperature in the range from 1840 to 2140 °C. The growth rate depends linearly on the amount of supersaturated carbon, irrespective of the growth temperature. This indicates that the growth is limited by the transfer of solute element onto the crystallization front. The adequate condition for stable solution growth are discussed with respect to high growth rate and surface morphology.