Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers

Abstract:

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 39-42
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.39
• Online since: January 2013
• Authors: Michl Kaiser, Thomas Hupfer, Valdas Jokubavicius, Saskia Schimmel, Mikael Syväjärvi, Yi Yu Ou, Hai Yan Ou, Margareta K. Linnarsson, Peter J. Wellmann
• Keywords: Doping, Orientation, Polycrystalline, PVT, Silicon Carbide (SiC)

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