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Paper Titles
Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers
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On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
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Absence of Back Stress Effect in the PVT Growth of 6H Silicon Carbide
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The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
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Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
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The Study of the Geometry and Growth Trend of Silicon Carbide Crystals

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Abstract:

The study compared the influences of silicon materials from different sources on the crystal growth process and geometry of silicon carbide (SiC). As revealed by the results of the study, although the purity of commercial silicon material was as high as 11N, the rate of crystal growth was slow. However, if the silicon material made by electron beam refining metallurgical silicon was utilized for the SiC crystal growth experiment, the morphology of SiC crystal was better and the rate of crystal growth was faster despite its purity being only about 4.5N.

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Silicon Carbide and Related Materials 2012 View Preview

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

56-59

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.56

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Online since:

January 2013

Authors:

Feng Jui Fong, Wun Yan Chen, Shen Tsao, Ta Ching Hsiao, Chih Fang Huang

Keywords:

Electorn Beam Furnace, Polytype, Silicon Carbide (SiC)

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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