SiC Sublimation Growth at Small Spacing between Source and Seed

E.N. Mokhov; A.D. Roenkov; A.S. Segal

doi:10.4028/www.scientific.net/MSF.740-742.69

Paper Titles

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy
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The Study of the Geometry and Growth Trend of Silicon Carbide Crystals
p.56

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.60

Growth of Large Diameter 4H-SiC by TSSG Technique
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SiC Sublimation Growth at Small Spacing between Source and Seed
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High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt
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The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
p.77

Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds
p.81

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742SiC Sublimation Growth at Small Spacing between...

SiC Sublimation Growth at Small Spacing between Source and Seed

Abstract:

The growth kinetics of SiC crystals doped with Al and Ga impurities and grown by the sublimation sandwich method at a small spacing between the source and the seed (<1 mm) has been studied. Dependence of an Al-doped SiC crystals growth rate on the clearance is shown to be non-monotonic and exhibits maximum at the clearance about of 100-300 μm. Such dependence is also observed for growth of pure and Ga-doped SiC crystals but only on (0001)Si face. The derived dependencies suggest that there are some considerable kinetic limitations of the SiC growth rate. High quality SiC crystals with such high concentration of the Al impurity as 2x10²¹ cm^-3 were grown.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

69-72

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.69

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Online since:

January 2013

Authors:

E.N. Mokhov, A.D. Roenkov, A.S. Segal

Keywords:

Aluminum (Al), GA, Growth Kinetics, Silicon Carbide (SiC), Small Spacing, Sublimation Sandwich Method

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References

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