Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds

E.N. Mokhov; A.A. Wolfson; H. Helava; Yuri Makarov

doi:10.4028/www.scientific.net/MSF.740-742.81

Paper Titles

Growth of Large Diameter 4H-SiC by TSSG Technique
p.65

SiC Sublimation Growth at Small Spacing between Source and Seed
p.69

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt
p.73

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
p.77

Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds
p.81

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
p.85

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
p.91

Sublimation Growth of Bulk AlN Crystals on SiC Seeds
p.95

Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds
p.99

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Sublimation Growth of AlN and GaN Bulk Crystals on...

Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds

Abstract:

Growth techniques of high quality AlN and GaN bulk crystals on SiC seeds by sublimation sandwich method are presented. GaN crystals were grown in the temperature range of 1100-1250 °C and with addition of ammonia (NH₃) to prevent GaN decomposition. GaN powder or metallic Ga was used as the source. AlN crystals up to 2 inch diameter have been grown on SiC seeds in the temperature range of 1950 -2050 ⁰С. Kinetic mechanisms and transport features in the sandwich cell are discussed. The achieved high crystal quality has allowed producing semiconductor devices on their basis, in particular, ultraviolet LEDs

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

81-84

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.81

Citation:

Cite this paper

Online since:

January 2013

Authors:

E.N. Mokhov, A.A. Wolfson, H. Helava, Yuri Makarov

Keywords:

Aluminum Nitride (AlN), Bulk Crystal, GaN, Growth, Sublimation Sandwich Method

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] O.V. Avdeev, T. Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk,H. Helava, M.G. Ramm, A.S. Segal , A.I. Zhmakin and Yu.N. Makarov. Development of 2" AlN Substrates Using SiC Seeds. Modern Aspects of Bulk Crystal and Thin Film Preparation. 2011, pp.213-262.

DOI: 10.5772/29853

Google Scholar

[2] Yu.A. Vodakov, E.N. Mokhov. Method of semicunducting silicon carbide production / Inventors certificate USSR, N 403275 (1970); Patent USA No 414572.

Google Scholar

[3] S. G. Mueller, R. T. Bondokov, K. E. Morgan, G. A. Slack, S. B. Schujman, J. Grandusky, J. A. Smart, and L. J. Schowalter The progress of AlN bulk growth and epitaxy for electronic applications. Phys. St Sol. A 206 (2009) 1153–1159.

DOI: 10.1002/pssa.200880758

Google Scholar

[4] Yu.A. Vodakov, E.N. Mokhov. Growth of GaN bulk crystals by sublimation sandwich method. (review article), In Vacuum Sci. and Techn. Nitrides as seen by the technology (2002) pp.59-77, Ed. Tatyana Paskova and Bo Monemar.

Google Scholar

[5] A.A. Wolfson, E.N. Mokhov. Effect of the duration of the growth process on the properties of GaN grown by the sublimation method, Semiconductors 43 (2009) 400-402.

DOI: 10.1134/s1063782609030269

Google Scholar

[6] E.N. Mokhov, A.V. Avdeev, I.S. Barash, T. Yu Chemikova, A.D. Roenkov, S. Yu. Karpov, A.S. Segal, A.A. Wolfson, Yu.N. Makarov, M.G. Ramm, H. Helava. Sublimation Growth of AlN bulk crystals in Ta crucibles, J. Cryst. Growth, 281 (2005) 93-100.

DOI: 10.1016/j.jcrysgro.2005.03.016

Google Scholar

[7] V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, Z. Sitar Mass transfer in AlN crystal growth at high temperatures, J. Cryst. Growth 264 (2004) 369–378.

DOI: 10.1016/j.jcrysgro.2004.01.028

Google Scholar

[8] Bei Wu, R. Ma, H. Zhang, M. Dudley, R. Schlesser, Z. Sitar. Growth kinetics and thermal stress in AlN bulk grystal growth. J. Cryst. Growth, 253 (2003) 326-339.

DOI: 10.1016/s0022-0248(03)01044-3

Google Scholar

[9] Yu.N. Makarov, O.V. Avdeev, I.S. Barash, D.S. Bazarevskiy, T. Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, M.G. Ramm, S. Davis, G. Huminic, H. Helava Experimental and theoretical analysis of sublimation growth of AlN bulk crystals. J. Cryst. Growth, 310 (2008).

DOI: 10.1016/j.jcrysgro.2007.11.059

Google Scholar