Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds

Rajappan Radhakrishnan Sumathi; Matthias Paun

doi:10.4028/www.scientific.net/MSF.740-742.99

Paper Titles

Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds
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Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
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Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
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Sublimation Growth of Bulk AlN Crystals on SiC Seeds
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Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds
p.99

AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates
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Effect of a Gas Pressure on the Growth Rate of AlN Layer
p.107

Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)
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X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Growth of (0001) AlN Single Crystals Using...

Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds

Abstract:

Growth of AlN single crystals using carbon-polar surface of SiC substrate by PVT growth method has been attempted. AlN growth on the carbon-face was dominated by spiral growth mode under the applied experimental conditions and further, an abrupt interface was observed between AlN layer and the substrate. Broad XRD rocking curve of the sample, taken from bottom part of the crystal, indicates a high density of misfit dislocations near the interface and further a shift of E₂(high) phonon mode in the Raman measurements shows a significant misfit stress. The XRD-RC FWHM values of symmetric 002 and asymmetric 102 reflections (top part of the crystal) are 380 and 300 arcsec respectively, whereas the Raman E₂(high) peak FWHM value is about 23 cm^-1. Decreasing intensity of silicon and carbon LVM peaks with increasing distance from the interface represents the reduction of their incorporation along the crystal length. EPMA analysis confirms the presence of low silicon concentration of 2 wt% in these crystals grown hetero-epitaxially on SiC.

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Materials Science Forum (Volumes 740-742)

Pages:

99-102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.99

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Online since:

January 2013

Authors:

Rajappan Radhakrishnan Sumathi, Matthias Paun

Keywords:

Aluminum Nitride (AlN), C-Face, Inversion Domains, N-Polar, Silicon Carbide (SiC), Single Crystal

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