Sublimation Growth of Bulk AlN Crystals on SiC Seeds

E.N. Mokhov; A.A. Wolfson; A.O. Avdeev; S.S. Nagalyuk; D. P. Litvin; A.V. Vasiliev; M.G. Ramm; Heikki Helava; Yu. Makarov

doi:10.4028/www.scientific.net/MSF.740-742.95

Paper Titles

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
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Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
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Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
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Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds
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AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates
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Effect of a Gas Pressure on the Growth Rate of AlN Layer
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Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Sublimation Growth of Bulk AlN Crystals on SiC...

Sublimation Growth of Bulk AlN Crystals on SiC Seeds

Abstract:

AlN bulk crystals were grown by the sublimation “sandwich method” on the SiC substrates. Two types of containers were used: (i) Ta container with a surface layer of TaC created by the special annealing in contact with carbon, (ii) TaC container created by pressing of TaC powder. Cryptocrystalline AlN wafers grown by oversublimation of the original industrial high purity AlN powder were used as a vapor source. So a considerable decrease of oxygen concentration in the source (10 – 30 times) was achieved. 4H and 6H SiC bulk crystals grown by Nitride Crystals, Ltd., which were used as wafers, were crack-free, micropipe-free and have a low dislocation density (1- 4^.10³cm^-2). The method allowed to grow thick AlN bulk crystals up to 5mm height and up to two inches in diameter with smooth mirror-like surface. X-ray diffractometry and topography of the grown AlN layers show that FWHMs of the rocking curves in ω-scan lie in the range of 60-120 arcsec.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

95-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.95

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Online since:

January 2013

Authors:

E.N. Mokhov, A.A. Wolfson, A.O. Avdeev, S.S. Nagalyuk, D. P. Litvin, A.V. Vasiliev, M.G. Ramm, Heikki Helava, Yu. Makarov

Keywords:

Aluminum Nitride (AlN), Bulk, Growth, Seed, Silicon Carbide (SiC)

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References

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