The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT

Jung Young Jung; Sang Il Lee; Mi Seon Park; Doe Hyung Lee; Hee Tae Lee; Won Jae Lee; Soon Ku Hong; Myong Chuel Chun

doi:10.4028/www.scientific.net/MSF.740-742.77

Paper Titles

Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method
p.60

Growth of Large Diameter 4H-SiC by TSSG Technique
p.65

SiC Sublimation Growth at Small Spacing between Source and Seed
p.69

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt
p.73

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
p.77

Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds
p.81

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
p.85

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
p.91

Sublimation Growth of Bulk AlN Crystals on SiC Seeds
p.95

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742The Effect of Modified Crucible Design and Seed...

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT

Abstract:

The present research was focused to investigate the effect of internal crucible design that influenced the 4H-SiC crystal growth onto a 6H-SiC seed by PVT method. The crucible design was modified to produce a uniform radial temperature gradient in the growth cell. The seed attachment was also modified with a use of polycrystalline SiC plate. The crystal quality of 4H-SiC single crystals grown in modified crucible and grown with modified seed attachment was revealed to be better than that of crystal grown in conventional crucible. The full width at half maximum (FWHM) values of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 285 arcsec, 134 arcsec and 128 arcsec, respectively. The micropipe density (MPD) of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 101ea/cm^2, 81ea/cm^2 and 42ea/cm^2, respectively.

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Materials Science Forum (Volumes 740-742)

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77-80

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.77

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Online since:

January 2013

Authors:

Jung Young Jung, Sang Il Lee, Mi Seon Park, Doe Hyung Lee, Hee Tae Lee, Won Jae Lee, Soon Ku Hong, Myong Chuel Chun

Keywords:

Modified Crucible, PVT, Seed Attachment, Silicon Carbide (SiC), Transformation

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