AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates

Katja Tonisch; Robert Benzig; Gernot Ecke; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.740-742.103

Paper Titles

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles
p.85

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules
p.91

Sublimation Growth of Bulk AlN Crystals on SiC Seeds
p.95

Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds
p.99

AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates
p.103

Effect of a Gas Pressure on the Growth Rate of AlN Layer
p.107

Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)
p.113

X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD
p.117

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation
p.121

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111)...

AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates

Abstract:

The growth of AlGaN solid solutions on 3C-SiC(111)/Si(111) is demonstrated. The residual stress of the grown layer was investigated by high resolution X-ray diffraction (HRXRD) and infrared ellipsometry. Analysis of the HRXRD data showed that the observed lattice distortion was caused partially by hydrostatic pressure and partially by biaxial tension. The residual stress depends on the layer composition and weakly on the growth temperature.

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Materials Science Forum (Volumes 740-742)

Pages:

103-106

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.103

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Online since:

January 2013

Authors:

Katja Tonisch, Robert Benzig, Gernot Ecke, Joerg Pezoldt

Keywords:

3C-SiC, AlGaN, Ellipsometry, Epitaxy, Solid Solution, Stress, X-Ray Diffraction (XRD)

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