Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

Enrique Escobedo-Cousin; Konstantin Vassilevski; Toby Hopf; Nick G. Wright; Anthony O’Neill; Alton B. Horsfall; Jonathan Goss; Peter Cumpson

doi:10.4028/www.scientific.net/MSF.740-742.121

Paper Titles

AlGaN Solid Solution Grown on 3C-SiC(111)/Si(111) Pseudosubstrates
p.103

Effect of a Gas Pressure on the Growth Rate of AlN Layer
p.107

Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)
p.113

X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD
p.117

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation
p.121

Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
p.125

A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
p.129

Graphene-on-Porous-Silicon Carbide Structures
p.133

Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
p.137

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Optimising the Growth of Few-Layer Graphene on...

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation

Abstract:

Few-layers graphene films (FLG) were grown by local solid phase epitaxy on a semi-insulating 6H-SiC substrate by annealing Ni films deposited on the Si and C-terminated faces of the SiC. The impact of the annealing process on the final quality of the FLG films is studied using Raman spectroscopy. X-ray photoelectron spectroscopy was used to verify the presence of graphene on the sample surface. We also demonstrate that further device fabrication steps such as dielectric deposition can be carried out without compromising the FLG films integrity.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

121-124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.121

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Online since:

January 2013

Authors:

Enrique Escobedo-Cousin, Konstantin Vassilevski, Toby Hopf, Nick G. Wright, Anthony O’Neill, Alton B. Horsfall, Jonathan Goss, Peter Cumpson

Keywords:

Few-Layer Graphene, Graphen, Nickel Silicide, Raman Scattering

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