Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment

Dang Chao Wang; Yu Ming Zhang; Yi Men Zhang; Hui Guo; Yue Hu Wang

doi:10.4028/www.scientific.net/MSF.740-742.125

Paper Titles

Effect of a Gas Pressure on the Growth Rate of AlN Layer
p.107

Impact of Substrate Steps and of Monolayer-Bilayer Junctions on the Electronic Transport in Epitaxial Graphene on 4H-SiC (0001)
p.113

X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD
p.117

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation
p.121

Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
p.125

A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
p.129

Graphene-on-Porous-Silicon Carbide Structures
p.133

Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
p.137

Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
p.141

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Raman Spectroscopy and XPS Analysis of Epitaxial...

Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment

Abstract:

This paper investigated a feasible process of growing epitaxial graphene on 4H hexagonal poly-type of silicon carbide Si-faced polar surface (0001) under an argon pressure of 900 mbar conditions. Using Raman Spectroscopy, Scanning Electron Microscopy and X-ray Photoelectron Spectroscopy, epitaxial graphene grown at temperature 1600°C is confirmed to take shape weakly on 4H-SiC (0001) with an average domain size of several tens of nanometers, and this can be seen as the characteristic of initial formation of epitaxial graphene on substrate.

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Materials Science Forum (Volumes 740-742)

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125-128

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https://doi.org/10.4028/www.scientific.net/MSF.740-742.125

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Online since:

January 2013

Authors:

Dang Chao Wang, Yu Ming Zhang, Yi Men Zhang, Hui Guo, Yue Hu Wang

Keywords:

Epitaxial Graphene, Raman Spectroscopy

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