Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC

Alexander A. Lebedev; Nina V. Agrinskaya; Viacheslav A. Berezovets; Veniamin I. Kozub; Sergey P. Lebedev; Alla A. Sitnikova; Demid A. Kirilenko

doi:10.4028/www.scientific.net/MSF.740-742.137

Paper Titles

Optimising the Growth of Few-Layer Graphene on Silicon Carbide by Nickel Silicidation
p.121

Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
p.125

A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
p.129

Graphene-on-Porous-Silicon Carbide Structures
p.133

Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
p.137

Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
p.141

High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
p.145

Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene
p.149

Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
p.153

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Low-Temperature Transport Properties of Graphene...

Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC

Abstract:

Transport properties of multigraphene layers on 6H-SiC substrates was studied. It was found that the curves of magnetoresistance and Shubnikov- de Haas oscillations shown the features, typical for single-layred graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

137-140

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.137

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Online since:

January 2013

Authors:

Alexander A. Lebedev, Nina V. Agrinskaya, Viacheslav A. Berezovets, Veniamin I. Kozub, Sergey P. Lebedev, Alla A. Sitnikova, Demid A. Kirilenko

Keywords:

Antilocalization, Graphen, Hall Bar, Shubnikov-de Haas Oscillations, Sublimation

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