Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC

Jens Eriksson; Donatella Puglisi; Remigijus Vasiliauskas; Anita Lloyd Spetz; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.740-742.153

Paper Titles

Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
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Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
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High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
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Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene
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Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
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Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
p.157

Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas
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Fast Growth Rate Epitaxy by Chloride Precursors
p.167

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Thickness Uniformity and Electron Doping in...

Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC

Abstract:

Large variations have been observed in the uniformity and carrier concentration of epitaxial graphene grown on SiC by sublimation for samples grown under identical conditions and on nominally on-axis hexagonal SiC (0001) substrates. We have previously shown that these issues are both related to the morphology of the graphene-SiC surface after sublimation growth. Here we present a study on how the substrate polytype, substrate surface morphology and surface restructuring during sublimation growth affect the uniformity and carrier concentration in epitaxial graphene on SiC. These issues were investigated employing surface morphology mapping by atomic force microscopy coupled with local surface potential mapping using Scanning Kelvin probe microscopy.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

153-156

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.153

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Online since:

January 2013

Authors:

Jens Eriksson, Donatella Puglisi, Remigijus Vasiliauskas, Anita Lloyd Spetz, Rositza Yakimova

Keywords:

Epitaxial Graphene on SiC, Scanning Kelvin Probe Microscopy, Thickness Uniformity, Unintentional Doping

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