Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties

Jawad Hassan; Axel Meyer; Semih Cakmakyapan; Ozgur Kazar; Jan Ingo Flege; Jens Falta; Ekmel Ozbay; Erik Janzén

doi:10.4028/www.scientific.net/MSF.740-742.157

Paper Titles

Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
p.141

High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
p.145

Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene
p.149

Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
p.153

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
p.157

Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas
p.161

Fast Growth Rate Epitaxy by Chloride Precursors
p.167

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications
p.173

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport
p.177

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Surface Evolution of 4H-SiC(0001) during In Situ...

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties

Abstract:

The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

157-160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.157

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Online since:

January 2013

Authors:

Jawad Hassan, Axel Meyer, Semih Cakmakyapan, Ozgur Kazar, Jan Ingo Flege, Jens Falta, Ekmel Ozbay, Erik Janzén

Keywords:

Atomic Force Microscopy (AFM), Carrier Mobility, Graphen, Hydrogen Intercalation, Low Energy Electron Microscopy, Surface Morphology

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References

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