On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

Abstract:

We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 µm and controlled n-type doping of 4 x 1014 cm-3.The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 s using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 173-176
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.173
• Online since: January 2013
• Authors: Jawad Hassan, Ian D. Booker, Louise Lilja, Anders Hallén, Martin Fagerlind, Peder Bergman, Erik Janzén
• Keywords: Carrier Lifetime, Chemical Vapor Deposition (CVD), Growth Mechanism, High Power Devices, On-Axis

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