Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Davy Carole; Arthur Vo Ha; Anthony Thomas; Mihai Lazar; Nicolas Thierry-Jebali; Dominique Tournier; François Cauwet; Véronique Soulière; Christian Brylinski; Pierre Brosselard; D. Planson; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.740-742.177

Paper Titles

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
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Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas
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Fast Growth Rate Epitaxy by Chloride Precursors
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On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications
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Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport
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Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
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Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates
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The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Study of the Nucleation of p-Doped SiC in...

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

Abstract:

This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using Vapour-Liquid-Solid (VLS) transport at temperature ≤ 1100°C. Focus was made on the nucleation step by observing the evolution of the growth as a function of growth duration with variable Si-content of the Al-Si liquid phase. Addition of propane during the initial heating ramping-up not only avoids liquid de-wetting but also allows good starting of the epitaxial growth. Additionally, it was observed that, by increasing the silicon content in the liquid, the morphology of the grown SiC is improved, and no parasitic Al4C3 inclusions are formed. Limiting the growth rate is found to be essential for getting controlled smooth growth process.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.177

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Online since:

January 2013

Authors:

Davy Carole, Arthur Vo Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry-Jebali, Dominique Tournier, François Cauwet, Véronique Soulière, Christian Brylinski, Pierre Brosselard, D. Planson, Gabriel Ferro

Keywords:

Aluminium Doping, p-Type Doping, Selective Epitaxy, VLS Crystal Growth

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References

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DOI: 10.4028/www.scientific.net/msf.717-720.169

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DOI: 10.4028/www.scientific.net/msf.740-742.911

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