The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

Keiko Masumoto; Kazutoshi Kojima; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.740-742.193

Paper Titles

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport
p.177

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
p.181

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates
p.185

Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
p.189

The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
p.193

Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
p.197

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
p.201

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC
p.205

Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires
p.209

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742The Growth of 3-Inch 4H-SiC Si-Face Epitaxial...

The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

Abstract:

We grew epitaxial layers on 3-inch epitaxial wafers with a vicinal off-angle, using a horizontal hot-wall chemical vapor deposition system that had a reactor capacity of 3 x 150 mm. Uniformity (σ/mean) of thickness and carrier concentration as small as 1.7% and 5.6%, respectively, were successfully obtained. We succeeded in decreasing triangular surface defects and polytype inclusions by increasing the growth temperature and lowering the C/Si ratio. In addition, I-V characteristics of Schottky barrier diodes on an epitaxial layer showed that a high blocking voltage of 960 V and a low leakage current of less than 1 x 10-6 A/cm2 were obtained with a yield of 78%.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

193-196

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.193

Citation:

Cite this paper

Online since:

January 2013

Authors:

Keiko Masumoto, Kazutoshi Kojima, Hajime Okumura

Keywords:

4H-SiC, Epitaxial Growth, Morpholoy, Off Angle, Triangular Defect, Uniformity, Vicinal

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S. Harada, S. Ito, M. Kato, A. Takatsuka, K. Kojima, K. Fukuda, H. Okumura, Mater. Sci. Forum 645-648 (2010) 999-1004.

DOI: 10.4028/www.scientific.net/msf.645-648.999

Google Scholar

[2] K. Kowciewicz, W. Strupinski, D. Teklinska, K. Mazur, M. Tokarczyk, G. Kowalski, A. Olszyna, Mater. Sci. Forum 679-680 (2012) 95-98.

DOI: 10.4028/www.scientific.net/msf.679-680.95

Google Scholar

[3] K. Kojima, S. Ito, A. Nagata, H. Okumura, Mater. Sci. Forum 717-720 (2012) 141-144.

Google Scholar

[4] J. Hassan, J.P. Bergman, J. Palisaitis, A. Hanry, P.J. McNally, S. Anderson, E. Janzen, Mater. Sci. Forum 645-648 (2010) 83-88.

Google Scholar

[5] K. Kojima, S. Kuroda, H. Okumura, K. Arai, Mater. Sci. Forum 556-557 (2007) 85-88.

Google Scholar

[6] A. Shrivastava, P. Muzykov, J.D. Caldwell, T.S. Sudarshan, J. Cryst. Grow. 310 (2008) 4443-4450.

Google Scholar

[7] C. Hecht, R. Stein, B. Thomas, L. Wehrhahn-Kilian, J. Rosberg, H. Kitahata, F. Wischmeyer, Mater. Sci. Forum 645-648 (2010) 89-94.

DOI: 10.4028/www.scientific.net/msf.645-648.89

Google Scholar

[8] T. Kimoto, H. Matsunami, J. Appl. Phys. 75 (1994) 850-859.

Google Scholar

[9] J. A. Powell, J.B. Petit, J.H. Edgar, I.G. Jenkins, L.G. Matus, J.W. Yang, P. Pirouz, W.J. Choyke, L. Clemen, M. Yaganathan, Appl. Phys. Lett. 59 (1991) 333-335.

DOI: 10.1063/1.105587

Google Scholar

[10] S. Nakamura, T. Kimoto, H. Matsunami, Jpn. J. Appl. Phys. 42 (2003) L846-L848.

Google Scholar

[11] A.A. Kuzubov, N.S. Eliseeva, P.O. Krasnov, F.N. Tomilin, A.S. Fedorav, A.V. Tolstaya, Russ. J. Phys. Chem. A 86 (2012) 1091-1095.

Google Scholar