Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC

Kanaparin Ariyawong; Valdas Jokubavicius; Rickard Liljedahl; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.201

Paper Titles

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates
p.185

Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
p.189

The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
p.193

Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
p.197

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
p.201

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC
p.205

Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires
p.209

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
p.213

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.217

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Step Instability in Sublimation Epitaxy on Low...

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC

Abstract:

The growth of homoepitaxial layers on off-oriented 6H-SiC substrates proceeds via step flow growth. Such epilayers can exhibit irregularities like step bunching, splicing or crossover of steps. The effects of the substrate off-orientation and growth temperature show an influence on formation of surface irregularities. The mean features seem to be given by the growth mode competition of two-dimensional growth to the step-flow growth.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

201-204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.201

Citation:

Cite this paper

Online since:

January 2013

Authors:

Kanaparin Ariyawong, Valdas Jokubavicius, Rickard Liljedahl, Mikael Syväjärvi

Keywords:

6H-SiC, Low Off-Axis, Step Bunching, Step Instability, Sublimation Epitaxy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Kimoto, H. Matsunami, J. Appl. Phys. 75 (1994) 850.

Google Scholar

[2] M. Syväjärvi, J. Müller, J.W. Sun, V. Grivickas, Y. Ou, V. Jokubavicius, P. Hens, M. Kaisr, K. Ariyawong, K. Gulbinas, P. Hens, R. Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker, H. Ou, Physica Scripta T148 (2012) 14002.

DOI: 10.1088/0031-8949/2012/t148/014002

Google Scholar

[3] M. Syväjärvi, R. Yakimova, E. Jenzen, J. Crystal Growth 236 (2002) 297.

Google Scholar

[4] V. Jokubavicius, B. Lundqvist, P. Hens, R. Liljedahl, R. Yakimova, S. Kamiyama,M. Syväjärvi, Mater. Sci. Forum, 717-720 (2012) 193.

DOI: 10.4028/www.scientific.net/msf.717-720.193

Google Scholar