Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate

Akira Miyasaka; Jun Norimatsu; Keisuke Fukada; Yutaka Tajima; Daisuke Muto; Yusuke Kimura; Michiya Odawara; Taichi Okano; Kenji Momose; Yuji Osawa; Hiroshi Osawa; Takayuki Sato

doi:10.4028/www.scientific.net/MSF.740-742.197

Paper Titles

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
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Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates
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Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
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The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
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Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
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Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
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Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC
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Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires
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Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Step-Bunching Free and 30 μm-Thick SiC Epitaxial...

Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate

Abstract:

The production of 150 mm-diameter SiC epi-wafers is the key to the spread of SiC power devices. Besides, step-bunching free surface leads to high-performance devices. We have developed the production technology of the epitaxial growth with smooth surface morphology for 4º off Si-face 4H-SiC epitaxial layers on 150 mm diameter substrates. The various area observations of the surface by optical surface analyzer, confocal microscope and atomic force microscope revealed that there was no conventional step-bunching in whole wafer surface. While creating step-bunching free surface is more difficult for thicker epilayer growth, we have achieved step-bunching free surface for 30-μm thick epilayer on a 150 mm diameter substrate. The typical values of thickness uniformity of the 30μm-thick epilayer are 0.5% (σ/mean) and 1.7% (range/mean). A few interfacial dislocations (IDs) were detected for the 150 mm-diameter epi-wafer by reflection X-ray topography. We have succeeded in removal of IDs by the optimized growth condition.

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Materials Science Forum (Volumes 740-742)

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197-200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.197

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Online since:

January 2013

Authors:

Akira Miyasaka, Jun Norimatsu, Keisuke Fukada, Yutaka Tajima, Daisuke Muto, Yusuke Kimura, Michiya Odawara, Taichi Okano, Kenji Momose, Yuji Osawa, Hiroshi Osawa, Takayuki Sato

Keywords:

150-Mm Diameter, 4H-SiC Epitaxial Growth, Dislocation, Step Bunching, Surface Morphology, Uniformity

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