Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

Galyna Melnychuk; Siva Prasad  Kotamraju; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.740-742.205

Paper Titles

Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
p.189

The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
p.193

Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
p.197

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
p.201

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC
p.205

Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires
p.209

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
p.213

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.217

Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
p.221

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Role of Cl/Si Ratio in the Low-Temperature...

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

Abstract:

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.