Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

Saskia Schimmel; Michl Kaiser; Philip Hens; Valdas Jakubavicius; Rickard Liljedahl; Jian Wu Sun; Rositza Yakimova; Yi Yu Ou; Hai Yan Ou; Margareta K. Linnarsson; Peter J. Wellmann; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.185

Paper Titles

Fast Growth Rate Epitaxy by Chloride Precursors
p.167

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications
p.173

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport
p.177

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
p.181

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates
p.185

Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC
p.189

The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
p.193

Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
p.197

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC
p.201

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Step-Flow Growth of Fluorescent 4H-SiC Layers on 4...

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

Abstract:

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.