Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas

Yukimune Watanabe; Keisuke Shinoda; Masahiro Tsukahara; Hiroyuki Shimada; Masahiro Furusawa; Tsuyoshi Horikawa; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.740-742.161

Paper Titles

High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
p.145

Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene
p.149

Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
p.153

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
p.157

Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas
p.161

Fast Growth Rate Epitaxy by Chloride Precursors
p.167

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications
p.173

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport
p.177

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
p.181

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Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas

Abstract:

The formation mechanism of a carbonized layer was investigated under low-pressure and low-temperature process conditions. The initial carbonized layer under those conditions was formed epitaxially using the silicon atoms sublimated from substrate and the carbon atoms of the gas source. This result is suggested from the consideration of pit formation mechanism at the Si/SiC interface. After the initial layer was formed, the carbonized layer grew by the diffusion process of the carbon atoms through the crystal defects in the initially formed layer. This is suggested from that the thickness of the carbonized layer increases linearly with the square root of the process time. The growth rate seemed to be determined by the concentration of carbon atoms taken into the SiC.