High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces

V. Karthik Nagareddy; Sandra C. Hernández; Virginia D. Wheeler; Luke O. Nyakiti; Rachael L. Myers-Ward; Charles R. Eddy; Jonathan P. Goss; Nicolas G. Wright; Scott G. Walton; D. Kurt Gaskill; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.740-742.145

Paper Titles

A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
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Graphene-on-Porous-Silicon Carbide Structures
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Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
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Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
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High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
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Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene
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Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
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Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
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Study of Carbonization Process on Surface of Si Substrate in High Vacuum Region with Hydrocarbon Gas
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742High Temperature Stability of Oxygen...

High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces

Abstract:

The electrical characteristics of oxygen functionalized epitaxial graphene and Ti/Au metal contact interfaces were systematically investigated as a function of temperature. As the temperature was increased from 300 K to 673 K, the contact resistance and the sheet resistance decreased by 75% and 33%, respectively. The resistance of oxygen functionalized graphene vs temperature exhibited Arrhenius type behavior with activation energy of 38 meV. The results showed no hysteresis effects in resistance measurements over the temperatures studied here, suggesting the contact interfaces remain stable at high temperatures.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

145-148

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.145

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Online since:

January 2013

Authors:

V. Karthik Nagareddy, Sandra C. Hernández, Virginia D. Wheeler, Luke O. Nyakiti, Rachael L. Myers-Ward, Charles R. Eddy, Jonathan P. Goss, Nicolas G. Wright, Scott G. Walton, D. Kurt Gaskill, Alton B. Horsfall

Keywords:

Contact Resistance, Epitaxial Graphene, Functionalization, Metal Contact, Oxygen

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