A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates

Abstract:

Abstract. The aim of this study is to compare DC characteristics of ‘as-grown’ and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at 1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during the graphitization process [6]. The fabrication processing steps used to define test structures are identical for the two materials. Results on the DC behaviour and uniformity issues with respect to both materials are reported. As-grown material behaves as a linear resistance, while H-intercalated demonstrates a non-linear characteristic. Hysteresis effects and time dependent behaviors are also observed in both materials. Extensive Hall measurements are performed on both materials with the aim of providing a qualitative understanding of material uniformity in both epi-graphenes.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 129-132
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.129
• Online since: January 2013
• Authors: Michael Winters, Mattias Thorsell, Jawad ul Hassan, Niklas Rorsman, Erik Janzén, Herbert Zirath
• Keywords: Comparison Study, DC Analysis, Epi-Graphene of SiC, Fabraction, H-Intercalation, Memory Effects, Uniformity

References

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DOI: 10.1021/nn101950n