Raman Spectroscopy and XPS Analysis of Epitaxial Graphene Grown on 4H-SiC (0001) Substrate under an Argon Pressure of 900 mbar Environment
p.125
p.125
A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
p.129
p.129
Graphene-on-Porous-Silicon Carbide Structures
p.133
p.133
Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
p.137
p.137
Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
p.141
p.141
High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
p.145
p.145
Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene
p.149
p.149
Thickness Uniformity and Electron Doping in Epitaxial Graphene on SiC
p.153
p.153
Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
p.157
p.157
Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States
Abstract:
The simple model for the one-layer graphene energy gaps induced by the substrate energy gap is pro-posed.
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Periodical:
Materials Science Forum (Volumes 740-742)
Pages:
141-144
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Online since:
January 2013
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© 2013 Trans Tech Publications Ltd. All Rights Reserved
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