Search results

Automatic Generation of The Word in Tire Mold Side Plate Based on Font Vectorization Hu Haiming1,2,a, Li Hui1,2,b and Yin Debao1,2,c 1College of Electromechanical Engineering, Qingdao University of Science & Technology, Qingdao, Shandong 266061,China 2Shandong Provincial Key Laboratory of Polymer Material Advanced Manufacturing Technology, Qingdao University of Science & Technology, 266061, China ahuhm64@163.com, bhongchenglihui@163.com, cyindebaook@126.com Key words: Tire Mold; Sidewall Plate; Word processing Abstract.
[3] Xu YUming, Wen Shuangchun, the analysis of TrueType font data file structure[J], The journals of HengYang normal college, 2008 (12): P.68-71.

Investigation and analysis on seismic damage of historic timber structures caused by Wenchuan Earthquake in Zhaohua Ancient City Lu Cheng1, a, Hongtao Liu1, Xiaowei Zhu1 and Bin Jia1 1Department of Civil Engineering and Architecture, Southwest University of Science and Technology, Mianyang, 621010, Sichuan, China aminervachan@yahoo.cn Keywords: Zhaohua Ancient City; Historic timber structures; Seismic damage Abstract.
Due to the different material properties of timber frame and retaining wall, if they are not properly connected, in the earthquake, they can not work cooperatively, which will result in the severe damage at the corner where the pillar and the wall are joined, as is shown in Fig. 10.
Acknowledgements This work was financially supported by Fund about National Natural Science Projects (51008260).
SDS01-15. (2009) (In Chinese) [5] Jun Su, Dafeng Gao, Study on the Seismic Performance of Chinese Ancient Timber Structure, Northwestern Seismological Journal, (2008), 30(3): 239-244.

Yusainee1,h 1Faculty of Applied Sciences Universiti Teknologi MARA Shah Alam, 40450 Shah Alam, Selangor, Malaysia 2Faculty of Applied Sciences Universiti Teknologi MARA Pahang, 26400 Bandar Jengka, Pahang, Malaysia asuazlina_29@yahoo.com,bdazhan@pahang.uitm.edu.my, csyamsyir@pahang.uitm.edu.my, dazman615@pahang.uitm.edu.my, ewanaizuddin@pahang.uitm.edu.my, fnorihan@pahang.uitm.edu.my, gruzianamohd@pahang.uitm.edu.my hsyedy237@salam.uitm.edu.my Keywords: BSCCO, Fe-doped, Critical Temperature, Electrical Properties, Lattice Parameter.
However, to obtain higher Jc is a challenging task whereby the substitution studies are needed in order to improve the critical current density of superconductor material.
M. de Jonge, Substitution Effects of Bi2Sr 2Ca(Cu 1-x Mx)2 Oδ+z (M=Co,Ni) Single Crystal, Chinese Journal of Physics, 34 (1996) 597

Matano to the Quantitative Analysis of Diffusion Phenomena Wolfgang Sprengel1,a and Masahiro Koiwa2,b 1Institute of Materials Physics, Graz University of Technology, Graz, Austria 2Department of Materials Science and Engineering, Kyoto University, Kyoto, Japan aw.sprengel@tugraz.at, bmkoiwa@zd.ztv.ne.jp, Keywords: Boltzmann, Matano, diffusion coefficient, analysis, history.
In text books of metallurgy or materials science this condition is illustrated as the origin of a plane which divides the area below the c(x) curve into two equal parts, an equivalent drawing can also be found in Matano’s paper (see Fig. 5b).
Often expressions found in textbooks of metallurgy or materials science concerning the “Matano plane” are misleading or simply wrong, as they do not correctly refer to the original paper by Matano.
In this sense, cleverly designed diffusion experiments in supercooled liquids might lead to new frontiers in materials science.
Cahn, The Coming of Materials Science, Pergamon, Amsterdam, 2001

Chained thermonuclear reactions will then lead to a combustion wave that propagates outward into the adjacent pusher material.
The material of and the inner ring of material of LD10 - CS, namely quenching aging treatment of wrought aluminum alloy, the material parameters as shown in table 3 [6].
Science Chinese. 6(1995) 4-6
[2] Peng H SH, Zhang X M and Fan D Y, Status of high - power solid - state lasers and engineering science, J.Engineering Science 3(2001), 1-7 [3] Linford R, Bett I R and Dah Lburg J, A review of the U.
Journal of Fusion Energy.22 (2003)93 - 126

Experiment Experimental materials Potassium persulfate (K2S2O8), Acrylamide (AM), sodium thiosulfate (Na2S2O3), acetone (C3H6O) and ethanol (C2H6O) were analytical pure grade, purchased from Kelong Chemical Reagent Plant in Chengdu, China.
So, any or all of these factors might improve the cake structure, making even the size distribution of the material in the cake and increase the cake porosity.
Ming Science and Technology.
Journal of China Coal Society.
Chinese Science Bulletin.

., H-1111, Budapest, Hungary 2FWigner Research Centre for Physics, Hungarian Academy of Sciences, PO.
Therefore, other - technically mature - materials with such desirable properties have come in focus.
Awschalom: Proceedings of the Natural Academy of Sciences Vol. 107 (2010), pp. 8513-8518 [5] L.
Gali: Materials Science Forum Vol. 778-780 (2014) pp. 499-502 [7] P.
Ernzerhof: The Journal of Chemical Physics Vol. 118 (2003), pp. 8207-8215 [12] J.

Experimental Materials.
References [1] Huiren Hu, Yangbing Wen, Shulan Shi: China pulp & paper (In Chinese) Vol.30 (2011), p.30 [2] Deping Sun, Jianfeng Xu, Liangcai Liu: China pulp & paper industry (In Chinese) Vol. 31 (2010), p.45 [3] Jiehui Li, Huiren Hu, Wen Liu: China pulp & paper(In Chinese) Vol.27 (2008), p.35 [4] Xinsheng Li, Xinlong Yan, Guangqing Zhang: Paper chemicals (In Chinese) Vol.20(2008)P.41 [5] Shunhui Chen: Journal of Henan Science and Technology (In Chinese) Vol.36(2011)P.65 [6] Anquan Hu, Heng Xu, Shufang Ji: Silicon Valley (In Chinese) Vol.9 (2010), P.139

Jikimoto 2 1 Electrical Physics Department, Komae Research Laboratory, CRIEPI, Central Research Institute of Electric Power Industry, 2-11-1 Iwado Kita, Komaeshi, Tokyo 201-8511, Japan 2 Energy Materials Science Department, Yokosuka Research Laboratory, CRIEPI, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka-shi, Kanagawa 240-0196, Keywords: First-principles Calculation, SiO2/SiC interface, Interface States, Abstract.
Right panel: Atomic structures of SiO2/4H-SiC(0 0 0.5 1 SiSiSiSi Si Si C C C O O SiCside SiO2 side Interface states distribution dangling bond β quartz/6H-SiC interface layer β quarzt/4H-SiC Fig. 2 Atomic layer distribution of interface density of state in SiO2/4H-SiC(0001): (closed circle and solid line) and SiO2/6H-SiC(0001): (open circle and dotted line) interfaces Journal Title and Volume Number (to be inserted by the publisher) 3 originating from C dangling bonds, lie 2.0 eV above the valence band edge.

Acknowledgement Project supported by the National Natural Science Foundation of China (Grant No. 60972134).
Cui, G.X. et al: submitted to Journal of Advanced Materials Research (2012) [4] W.