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Online since: December 2024
Authors: Rahul Davis, Khangamlung Kamei, Robson Bruno Dutra Pereira
., Microstructures and impact toughness behavior of Al 5083 alloy processed by cryorolling and afterwards annealing.
El-Haik.: Taguchi’s Orthogonal Array Experiment, Chap. 13 in Design for Six Sigma: A Roadmap for Product Development. 2nd ed.
El-Haik.: Taguchi’s Orthogonal Array Experiment, Chap. 13 in Design for Six Sigma: A Roadmap for Product Development. 2nd ed.
Online since: April 2019
Authors: Marek S. Weglowski, Robert Jachym, Bogdan Antoszewski, Sylwester Błacha, Łukasz Rogal, Hubert Danielewski, Jan Dutkiewicz
Reymonta Str. 25, 30-059 Kraków, Poland
3Kielce University of Technology, Department of Mechatronics and Mechanical Engineering, Laser Research Center, Tysiąclecia Państwa Polskiego Avenue 7, 25-314 Kielce, Poland
amarek.weglowski@is.gliwice.pl*, bsylwester.blacha@is.gliwice.pl, crobert.jachym@is.gliwice.pl, dj.dutkiewicz@imim.pl, el.rogal@imim.pl, fktrba@tu.kielce.pl, ghdanielewski@tu.kielce.pl
Keywords: additive manufacturing, electron beam, laser beam, stainless steel.
Moroni, et al., Design for Additive Manufacturing: Trends, opportunities, considerations, and constraints, CIRP Annals 65 (2016) 737-760
Moroni, et al., Design for Additive Manufacturing: Trends, opportunities, considerations, and constraints, CIRP Annals 65 (2016) 737-760
Online since: September 2016
Authors: Haji Aripin, Inyoman Nyoman Sudiana, Sliven Sabchevski, Seitaro Mitsudo, Bambang Sunendar, Nundang Busaeri
The increase
of the bandgap energy of TiO2 and the intensity of absorption can be attributed to the enlargement of the TiO2 particle size and to the formation of more Si–O–Ti bonds, leading to a significant modification of the electronic structure, as shown by Grieken et al., [26].
El-Toni, S.
El-Toni, S.
Online since: July 2021
Authors: Martin Palou, Janette Dragomirová, Katalin Gméling, Veronika Szilágyi, Ildikó Harsányi, László Szentmiklósi
.%]
Sample
59Fe
Ba
S
Si
Mg
Ca
Al
Mn
85Sr
Ti
V
Cl
HWC1
29.93
14.94
4.27
3.54
0.99
0.81
0.52
0.59
0.24
0.066
0.040
0.008
HWC2
30.05
15.01
4.29
3.56
1.00
0.92
0.52
0.60
0.24
0.066
0.040
0.008
HWC3
30.20
15.10
4.32
3.57
1.01
1.04
0.52
0.60
0.24
0.067
0.040
0.008
Table 4 Composition of minor elements and their isotopes in the samples [wt.%]
Sample
B
Gd
181Hf
160Tb
182Ta
46Sc
141Ce
H
65Zn
124Sb
HWC1
2E-05
7E-05
3E-05
5E-06
5E-06
0.0004
0.0023
0.005
0.008
0.023
HWC2
2E-05
7E-05
3E-05
5E-06
5E-06
0.0004
0.0023
0.005
0.007
0.023
HWC3
2E-05
7E-05
3E-05
5E-06
5E-06
0.0004
0.0023
0.005
0.006
0.024
Table 5 Composition of potentially radioactive elements in the samples [wt.%]
Sample
Cs
Co
Eu
Cr
HWC1
2.44E-05
0.0035
2.70E-05
5.67E-04
HWC2
2.33E-05
0.0035
2.75E-05
5.70E-04
HWC3
2.22E-05
0.0035
2.81E-05
5.73E-04
The cube compressive strength, the tensile strength (4-point bending test), and the dynamic modulus of elasticity of the samples after 28 days were determined in accordance with STN
El-Khayatt, The effect of barite proportion on neutron and gamma-ray shielding, Ann.
El-Khayatt, The effect of barite proportion on neutron and gamma-ray shielding, Ann.
Online since: March 2022
Authors: Edward Yi Chang, Jui Sheng Wu
Then the device fabrication ends with ohmic contact formation using alloyed Ti/Al/Ni/Au metal stack, mesa isolation using ion implantation (The energy and the fluence of B11+ were 190 keV and 3×1013 /cm2, respectively), and gate metal deposition using Ni/Au.
Intermed., vol. 43, pp. 3563–3572, Feb. 2016, doi: 10.1007/s11164-016-2430-1 [12] Jingqian Liu, Jinyan Wang, Zhe Xu, Haisang Jiang, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang and Yue Hao, “Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure” Electronics Letters, vol. 51, no. 23, pp. 1932–1933, Nov. 2015, doi: 10.1049/el.2015.1755 [13] Chen, Y., Song, H., Li, D., Sun, X., Jiang, H., Li, Z., Miao, G., Zhang, Z., & Zhou, Y., “Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD”, Mater.
Intermed., vol. 43, pp. 3563–3572, Feb. 2016, doi: 10.1007/s11164-016-2430-1 [12] Jingqian Liu, Jinyan Wang, Zhe Xu, Haisang Jiang, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang and Yue Hao, “Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure” Electronics Letters, vol. 51, no. 23, pp. 1932–1933, Nov. 2015, doi: 10.1049/el.2015.1755 [13] Chen, Y., Song, H., Li, D., Sun, X., Jiang, H., Li, Z., Miao, G., Zhang, Z., & Zhou, Y., “Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD”, Mater.