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Online since: October 2018
Authors: Kari Mäntyjärvi, Terho Iso-Junno, Tero Jokelainen, Kimmo Mäkelä
In the study of Mäntyjärvi et al. [22], an integration analysis between Design for Assembly and Manufacturing (DFMA) and DFAM has been performed.
Mäkikangas, Design for additive manufacturing in extended DFMA process, Proceedings of the International Conference on Materials Science and Engineering ICMSE-RAC 2018, (2018), New Borg El-Arab, Alexandria, Egypt – SUBMITTED
Mäkikangas, Design for additive manufacturing in extended DFMA process, Proceedings of the International Conference on Materials Science and Engineering ICMSE-RAC 2018, (2018), New Borg El-Arab, Alexandria, Egypt – SUBMITTED
Online since: August 2024
Authors: Jang Kwon Lim, Mietek Bakowski, Hithiksha Krishna Murthy
El, Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs, in IEEE Transactions on Electron Devices, vol. 62, no. 2, pp. 316-323, Feb. 2015, doi: 10.1109/TED.2014.2356172
Lelis et al., Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements, IEEE Trans.
Lelis et al., Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements, IEEE Trans.
Online since: September 2011
Authors: Yun Xu, Zhong Yang, Bing Zhao, Xu Jun Chen
El-centro wave(1940),Taft wave(1952) and Ninghe wave(1976), were respectively used to simulate earthquake excitations for calculating the structural elastoplastic responses.
Comput struct 1999(169):1-18 [5] Zhu K,Al-Bermani FGA, Kitipornchai S.
Comput struct 1999(169):1-18 [5] Zhu K,Al-Bermani FGA, Kitipornchai S.