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Papers by Author: Saurdi Ishak

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Electrical and Structural Properties of Nanostructured Tin Doped Zinc Oxide Deposited by Sol-Gel Immersion Method

Authors: Shafura Karim, Shafeena Mohd Saad, Saurdi Ishak, Najwa Ezira Ahmed Azhar, Ruziana Mohamed, Uzer Mohd Noor, Mohamad Hafiz Mamat, Ahmad Shuhaimi Abu Bakar, Salman A.H. Alrokayan, Haseeb A. Khan, Mohammad Rusop

Abstract: Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. The synthesized samples were characterized by current-voltage (I-V) measurement and Field Emission Scanning Electron Microscopy (FESEM). The Sn doping concentration were varied at 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. FESEM images show that as the Sn concentration increased, the nanoparticles size of Sn-doped ZnO become denser and less grain boundary which might help in improvement of the electrical properties.

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Effect of Various Tin Doping Percentages on the Electrical and Structural Properties of Nanostructured Zinc Oxide Thin Films Deposited Using Sol-Gel Immersion Method for Gas Sensing Application

Authors: Shafura Karim, Syukriyah Ismail, Saurdi Ishak, Najwa Ezira Ahmed Azhar, Ruziana Mohamed, Uzer Mohd Noor, Mohamad Hafiz Mamat, Ahmad Shuhaimi Abu Bakar, Salman A.H. Alrokayan, Haseeb A. Khan, Mohamad Rusop

Abstract: Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. Then the synthesized samples were characterized by current-voltage (I-V) measurement and FESEM. The Sn doping concentration were varied at 0.2 at.%, 0.4 at.%, 0.6 at.%, 0.8 at.% and 1.0 at.%. The result suggests that the optimum value for Sn doping concentration was 0.8 at.% which exhibited the highest conductive sample with value of 3.00 ×10^-6 S/cm.

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