Description: This volume presents a selection from papers submitted to the International Conference “Phase transitions, critical and nonlinear phenomena in condensed matter”. The papers selected for this volume tend to present to a reader recent advances in the fields of phase transitions and critical phenomena in condensed matter; mathematical modeling and computer simulation of phase transitions and critical phenomena; nonlinear phenomena and chaos in condensed matter; structural transformations in carbon materials and also recent results in the field of investigation of the meteorite “Chelyabinsk”.

Defects and Diffusion in Semiconductors I

Edited by: Dr. David J. Fisher

Online since: July 1998

Description: This issue, and the ones which will follow year-by-year, can be regarded not only as supplements to the recent special 10-year retrospective volumes on Diffusion in Silicon (volumes 153-155) and Diffusion in III-V Compounds (volumes 157-159), but also as a return to the 'regular business' of Diffusion and Defect Forum's 30-year project of succinctly summarising recent progress in these fields.

The present volume abstracts those papers published during the approximate period from June 1997 to June 1998. Earlier papers have been included in order to make sure that the coverage is contiguous with volume 152 of Defect and Diffusion Forum; the most recent 'regular' issue. Due to vagaries in publication schedules, the 1998 cut-off point is not exact, but any omissions will be corrected in the next annual retrospective. General priority has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies. Lesser priority has been given to reviews and to entirely theoretical work.